Silicon Nitride in Compound Semiconductor Field Effect Transistors
Identifieur interne : 002047 ( Main/Exploration ); précédent : 002046; suivant : 002048Silicon Nitride in Compound Semiconductor Field Effect Transistors
Auteurs : Eberhard F. Krimmel [Allemagne] ; Rudolf Hezel [Allemagne] ; Uwe Nohl [Allemagne] ; Rainer Bohrer [Allemagne]Source :
- Si. Silicium. Silicon (System-Nr. 15)
Abstract
Abstract: The problem to grow natural, insulating oxides with good properties on compound semiconductors such as GaAs does not favor the fabrication and application of bipolar devices and even less of MIS devices. Therefore, silicon nitride plays an important role as a masking material for diffusion, implantation, and as dielectric in the manufacture of compound semiconductor devices.
Url:
DOI: 10.1007/978-3-662-09901-8_22
Affiliations:
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